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(Toshiba mDoC)
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==Toshiba mDoC==  
 
==Toshiba mDoC==  
 
ms25-d10sd9-b3-p = RAM 64 + DOC G4 1Gbit(128MB)
 
ms25-d10sd9-b3-p = RAM 64 + DOC G4 1Gbit(128MB)
 +
 
ardress = 0x0000_0000
 
ardress = 0x0000_0000
 +
 
MSC (Static Memory Control Registers )
 
MSC (Static Memory Control Registers )
  
 
CS0  
 
CS0  
MSC0{0,16} = 10011000 10001000
+
MSC0{0,16} = 10011000 10001000
ROM Type = Synchronous flash or non-burst ROM or non-burst flash
+
ROM Type = Synchronous flash or non-burst ROM or non-burst flash
ROM Bus Width = 16 bits
+
ROM Bus Width = 16 bits
ROM Delay First Access = 0b1000
+
ROM Delay First Access = 0b1000
Delay Next Access = 0b1000
+
Delay Next Access = 0b1000
ROM/SRAM Recovery Time = 0b001
+
ROM/SRAM Recovery Time = 0b001
RBUFFx = Faster device (streaming behavior)
+
RBUFFx = Faster device (streaming behavior)
 +
 
  
 +
----
  
----
 
 
==DoC G4_1 registers==  
 
==DoC G4_1 registers==  
 
----  
 
----  

Версия 22:13, 25 октября 2010

Toshiba mDoC

ms25-d10sd9-b3-p = RAM 64 + DOC G4 1Gbit(128MB)

ardress = 0x0000_0000

MSC (Static Memory Control Registers )

CS0

MSC0{0,16} = 10011000 10001000
ROM Type = Synchronous flash or non-burst ROM or non-burst flash
ROM Bus Width = 16 bits
ROM Delay First Access = 0b1000
Delay Next Access = 0b1000
ROM/SRAM Recovery Time = 0b001
RBUFFx = Faster device (streaming behavior)



DoC G4_1 registers


offset length documented read/write Description
+0000 0x800 * RW .text
+0800 0x800 * RW data window
+1000 short * RO chipid_00x400
+1004 byte * RW test
+1008 short * RW endian control
+100a byte * RW device id select
+100c byte * RW DoC control
+100e byte * RW configuration
+1010 short * RW interrupt control
+1014 byte * RW output control
+101a short * RW read address
+101c short * RW multiburst mode control
+101e byte - W 0x0
+1020 byte * RW interrupt status
+1022 byte - W+
+1032 byte - W FlashSelect : 0xe, 0x12, 0x0, 0x9, (0x31,0x1d, 0x27-erase)
+1034 byte - W FlashCmd : 0x30, 0x5, 0xe0, 0x60, 0x22, (0x3c, 0xa2, 0x50, 0xff, 0x71, 0x80, 0x11,0xd0-erase)
+1036 byte - W FlashAddr
+1038 byte - RW FlashCtrl: w 0x39, r &0x6
+103a short - R read data from flash
+103e short * W NOP (write here causes a delay)
+1040 short - (R)W 0x8a0f
+1042 byte - R tst 0x80 (tst 0x20 -hamm)
+1044 byte - W+ 0
+1046 byte - R+ hamm
+1056 byte - RW+ (orr 0x8)
+105c byte - W+
+106c byte - R+
+1072 byte * RW DoC control confirmation
+1074 short * RO chipid_1 (G30xfdff(200), G4=0xfbff(400))
+1076 byte - R+ (orr 0x80, 0xc3)
+1078 short * RW dma control 0
+107a short * RW dma control 1
+107c byte * RW DPD

DoC G4_2 registers


offset length documented read/write Description
+0000 0x800 * RW .text
+0800 0x800 * RW data window
+201000 short * RO chipid_00x400
+201004 byte * RW test
+201008 short * RW endian control
+20100a byte * RW device id select
+20100c byte * RW DoC control
+20100e byte * RW configuration
+201010 short * RW interrupt control
+201014 byte * RW output control
+20101a short * RW read address
+20101c short * RW multiburst mode control
+20101e byte - W 0x0
+201020 byte * RW interrupt status
+201022 byte - W+
+201032 byte - W FlashSelect : 0xe, 0x12, 0x0, 0x9, (0x31,0x1d, 0x27-erase)
+201034 byte - W FlashCmd : 0x30, 0x5, 0xe0, 0x60, 0x22, (0x3c, 0xa2, 0x50, 0xff, 0x71, 0x80, 0x11,0xd0-erase)
+201036 byte - W FlashAddr
+201038 byte - RW FlashCtrl: w 0x19, r 0x6
+20103c short - R  ?
+20103e byte * W NOP (write here causes a delay)
+201040 short - (R)W 0x920f
+201042 byte - R tst 0x80 (tst 0x20 -hamm)
+201044 byte - W+ 0
+201046 byte - R+ hamm
+201050 short - R  ? 3c related
+201056 byte - RW+ (orr 0x8)
+20105c byte - W+
+20106c byte - R+
+201072 byte * RW DoC control confirmation
+201074 short * RO chipid_1 (G30xfdff(200), G4=0xfbff(400))
+201076 byte - R+ (orr 0x80, 0xc3)
+201078 short * RW dma control 0
+20107a short * RW dma control 1
+20107c byte * RW DPD

ссылки

регистры и описание http://forum.xda-developers.com/wiki/index.php?title=HTC_DiskOnChip